Amplified, large-area (7 mm2) Si photodiode with fast response. The detector employs a high bandwidth op amp with excellent long-term stability and low 1/f noise. Three user-selectable gain settings with 1% relative accuracy allow for > 90 dB dynamic range. An ultra-low noise voltage regulator fed by a USB rechargeable, Lithium polymer battery reverse biases the diode and powers the amplifier. The unit is packaged in a standard lens tube with 1.035"-40 threads for convenient mechanical integration.
Regular price$265.00Sale price$265.00
LiPo-Powered Amplified Si Photodiode
1 / of2
Scroll to section
Large area Si PIN photodiode
Selectable gain: 1.5/15/150 kV/A
Rechargeable LiPo battery power
Compact package (1-inch diameter lens tube) for convenient integration
Fast: 30 ns rise time at low gain
Dynamic range (> 90 dB)
DC-1.5 MHz bandwidth
Sensitive synchronous detection
Fast time domain monitoring
Characterization of diffuse radiation
The sensor head comprises a reverse biased Si PIN photodiode and a DC-coupled transimpedance amplifier with an output stage capable of driving a 50 Ω load.
Contact us to discuss custom solutions, pricing and lead-time. Example customizations include:
Blue / green optimized silicon PIN diode
Infrared / near-infrared InGaAs diode
Transimpedance gain
Extended battery life
Specifications
Wavelength
400-1100 nm
Sensitive area
2.65 mm x 2.65 mm
Quantum efficiency
0.9 @ 850 nm
Responsivity
0.62 A/W @ 850 nm
Gain into 50Ω load
1.5 kV/A (l) 15 kV/A (m) 150 kV/A (h)
Bandwidth (3dB)
DC-1.5 MHz (l/m) DC-700 kHz (h)
Rise time
30/60/130 ns (l/m/h)
Noise @ 10 kHz
65 nV Hz-1/2 (h)
NEP @ 850 nm
700 fW Hz-1/2(h)
Integrated noise
290 µV RMS
Maximum output
1.2 Vpp into 50Ω
DC offset voltage
0.250 V
DC offset stability
1.5 µV RMS (1 hr)
Power supply
5 V @ 300 mA
Power connector
Micro-USB
Signal connector
SMA
Lens tube
1.035”-40 x 1.5”
Operating temp
5-30° C
Battery lifetime
16 hr (dark) 6 hr (illuminated)
High Speed Amplifier at Three Gains
Measured single nanosecond duration laser pulse (650 nm) at the three gain settings with rise times shown in the legend. The fall times are 460 ns for the high gain setting and 230 ns for the medium and low settings. The light source is an Eikonal Nanosecond Pulsed Laser Diode (NLD-01).
Noise Performance in a Portable Package
Noise power spectral density at high gain measured with two spectrum analyzers. Modeled SPICE prediction is also shown.
Choosing a selection results in a full page refresh.
%20Si%20photodiode%20with%20fast%20response.%20The%20detector%20employs%20a%20high%20bandwidth...){kind=link}
